| AVS 51st International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS2-MoM1 Challenges Facing Deep Trench Silicon Etching for Present and Future Trench Technology Nodes A.M. Paterson, S. Pamarthy, A. Khan, F. Ameri, J.Y. Chen, H. Mohiuddin, T. Panagopoulos, J.P. Holland, T. Lill, Applied Materials, Inc., A. Steinbach, S. Wege, Infineon Technologies |
| 8:40am | PS2-MoM2 Etching High Aspect Ratio Structures in Si using SF@sub 6@/O@sub 2@ Plasma: Experiments and Feature Scale Modeling R.J. Belen, S. Gomez, University of California Santa Barbara, M. Kiehlbauch, D. Cooperberg, Lam Research Corporation, E.S. Aydil, University of California Santa Barbara |
| 9:00am | PS2-MoM3 Etch Rate and Profile Evolution Model for High Aspect Ratio Etch in HBr/NF3/O2 Plasma A. Kersch, W. Jacobs, W. Sabisch, G. Schulze-Icking, A. Henke, S. Wege, Infineon Technologies AG, Germany |
| 9:20am | PS2-MoM4 Optimal Chamber Aspect Ratio of an Inductively Coupled Plasma Etcher for Advanced Gate Application Y.D. Du, Applied Materials Inc. |
| 9:40am | PS2-MoM5 Highly Anisotropic and Damage-free Gate Electrode Patterning in Neutral Beam Etching Using F@sub 2@ Based Gas Chemistry S. Noda, Tohoku University, Japan, Y. Hoshino, Showa Denko K.K., Japan, T. Ozaki, S. Samukawa, Tohoku University, Japan |
| 10:00am | PS2-MoM6 Silicon Recess Formation During High Density Plasma Polysilicon Gate Etching S.A. Vitale, B.A. Smith, Texas Instruments |
| 10:20am | PS2-MoM7 Deep Cryo-Etching for Silicon Structures T.T. Tillocher, R.D. Dussart, X.M. Mellhaoui, P.L. Lefaucheux, GREMI - Orléans University, France, M.B. Boufnichel, ST Microelectronics - Tours, France, P.R. Ranson, GREMI - Orléans University, France |
| 11:00am | PS2-MoM9 Atomic-scale Simulations of Spontaneous and Ion-assisted Etching of Silicon D. Humbird, D.B. Graves, University of California, Berkeley |
| 11:20am | PS2-MoM10 X-ray Photoelectron Spectroscopy Analyses of SiGe and Si Surfaces after Selective Etching of Si S. Borel, O. Renault, J. Bilde, CEA-DRT-LETI, France |