| AVS 51st International Symposium | |
| Plasma Science and Technology | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1+DI-FrM1 Inductively Coupled Plasma Etching of Poly-SiC in SF6 Chemistries S.H. Kuah, P.C. Wood, SAMCO International Inc. |
| 8:40am | PS1+DI-FrM2 A Study of Inductively Coupled Plasma Etch of GaN/InGaN Based Light Emitting Diodes H.D. Chiang, K.C. Leou, C.H. Shen, S. Gwo, National Tsing Hua University, Taiwan, M.H. Wu, Uni Light Technology Inc., Taiwan, C.H. Tsai, National Tsing Hua University, Taiwan |
| 9:00am | PS1+DI-FrM3 High-k Materials Etching D. Wu, B. Ji, S.A. Motika, E.J. Karwacki, M.J. Plishka, Air Products and Chemicals, Inc. |
| 9:20am | PS1+DI-FrM4 Ion-Enhanced Plasma Etching of Metal Oxides in Chlorine Based Plasmas D. Ramirez, Y. Ta, J.P. Chang, University of California, Los Angeles |
| 9:40am | PS1+DI-FrM5 Investigation of Etching Properties of HfSiO and HfSiON as Gate Dielectrics J.H. Chen, W.S. Hwang, W.J. Yoo, S.H.D. Chan, National University of Singapore |
| 10:00am | PS1+DI-FrM6 Etching of HfO@sub 2@ and HfSiO@sub x@ at Elevated Temperatures M. Hélot, CNRS, France, G. Borvon, T. Chevolleau, L. Vallier, O. Joubert, LTM-CNRS, France, P. Mangiagalli, J. Jin, Y.D. Du, M. Shen, Applied Materials |
| 10:20am | PS1+DI-FrM7 Ion-enhanced Etching of HfO@sub2@ with Cl@super+@, BCl@subx@@super+@(X = 1, 2) and SiCl @subx@@super+@(X = 1, 2,3) Ion K. Karahashi, N. Mise, MIRAI-ASET, JAPAN, T. Horikawa, MIRAI-ASRC/AIST, Japan, A. Toriumi, MIRAI-ASRC/AIST, Univ. of Tokyo, Japan |
| 10:40am | PS1+DI-FrM8 Evaluation of the Effectiveness of H@sub 2@ Plasmas in Removing Boron from Si After Etching of HfO@sub 2@ Films in BCl@sub 3@ Plasmas C. Wang, V.M. Donnelly, University of Houston |
| 11:00am | PS1+DI-FrM9 Selective Etching of HfO@sub 2@ High-k Dielectric over Si in C@sub 4@F@sub 8@/Ar/H@sub 2@ Inductively Coupled Plasmas K. Takahashi, K. Ono, Y. Setsuhara, Kyoto University, Japan |
| 11:20am | PS1+DI-FrM10 Characterization of the Sputtering Process in an rf Plasma for the Patterning of Nonvolatile Materials T.J. Kropewnicki, A.M. Paterson, T. Panagopoulos, J.P. Holland, Applied Materials, Inc. |