| AVS 51st International Symposium | |
| Nanometer-scale Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:40am | NS-MoM2 Quantitative Analysis of Electronic Properties of Carbon Nanotubes by Scanning Probe Microscopy: from Atomic to Mesoscopic Length Scales V. Meunier, S.V. Kalinin, J. Shin, A.P. Baddorf, R.J. Harrison, Oak Ridge National Laboratory |
| 9:00am | NS-MoM3 Invited Paper Electronics and Optoelectronics with Single Carbon Nanotubes P. Avouris, IBM T.J. Watson Research Center |
| 9:40am | NS-MoM5 Ballistic Transport of Hole in 4µm Carbon Nanotube Channel Transistor with Coulomb Blockade Effect K. Matsumoto, Osaka University, Japan |
| 10:00am | NS-MoM6 Carbon Nanotube Photo-detectors M.S. Marcus, O.M. Castellini, J.M. Simmons, M.A. Eriksson, University of Wisconsin-Madison |
| 10:20am | NS-MoM7 Field Electron Emission from Aligned Carbon Nanotube Bundles at an Ultra-Low Threshold of 1 V/µm K.-Y. Lee, M. Katayama, N. Hayashi, Y. Terao, T. Miyake, K. Himuro, S. Honda, J.-G. Lee, Osaka University, Japan, T. Hirao, Kochi University of Technology, Japan, H. Mori, K. Oura, Osaka University, Japan |
| 10:40am | NS-MoM8 Modeling of Gas-modulated Carbon Nanotube Schottky Barrier T. Yamada, NASA Ames Research Center |
| 11:00am | NS-MoM9 Environmental Effects on Double Wall Carbon Nanotube Field Effect Transistors D. Kang, W. Park, Samsung Advanced Institute of Technology, Korea, J.R. Kim, Chonbuk National University, Korea, C.J. Lee, Hanyang University, Korea, J.J. Kim, Chonbuk National University, Korea |
| 11:20am | NS-MoM10 Electrical Characterization of Carbon Welds between Multiwalled Carbon Nanotubes P. Rice, S.E. Russek, P. Kabos, R.H. Geiss, NIST |
| 11:40am | NS-MoM11 Stiffness and Nonlinear Mechanical Properties of Single-Walled Carbon Nanotube Bundles P. Jaroenapibal, D.E. Luzzi, S. Evoy, University of Pennsylvania |