We have succeeded in observing the coexistence of the ballistic transport and Coulomb blockade effects of hole in the carbon nanotube channel transistor. The carbon nanotube was grown by the thermal chemical vapor deposition. After the growth of carbon nanotube, the source, drain, gate electrodes were formed. The distance between the source and drain electrode is 4µmm, that means the effective channel length of carbon nanotube is 4µmm. The sample was measured at 8.6K. The dependence of the drain current on the gate bias shows the periodic Coulomb oscillation and Coulomb diamond characteristics with the periods of 150mV. The drain current decrease with the increase of the gate bias, which means the carrier is hole. From the size of the Coulomb gap, the total charging energy was estimated to be as small as 3.1meV. From this charging energy, the length of the island was estimated to be about 4µmm, which coincides with the carbon nanotube channel length. This fact means that the entire carbon nanotube works as one island for the Coulomb blockade effect for the hole. At the outside of the Coulomb blockade regions, the drain current shows the negative differential conductance with the periods of as small as 400µmV. This negative differential conductance is attributed to the resonant tunneling of the hole through the quantum confinement state formed inside the carbon nanotube. From the periods of the negative differential conductance, the length of the quantum well formed inside the nanotube was calculated to be as large as about 4µmm, which again coincides with the entire carbon nanotube channel length. This result means the quite important facts that the quantum confinement state is formed in the entire carbon nanotube and tunneling barrier is formed at the source and drain electrodes. Therefore, hole can transport ballistically through entire carbon nanotube channel of 4µmm by keeping the coherency of the hole wave.