AVS 51st International Symposium | |
MEMS and NEMS | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
1:20pm | MN+MS+PS+TF-TuA1 Invited Paper Wafer-Level, Low-Cost, High-Vacuum Packaging of MEMS Devices Using Nanogetter TM N. Najafi, D.S. Sparks, Integrated Sensing Systems, Inc. (ISSYS) |
2:00pm | MN+MS+PS+TF-TuA3 Low-Pressure and Plasma-Enhanced Chemical Vapor Deposition Modeling at the Feature Length Scale of MEMS Devices L.C. Musson, Sandia National Laboratories, P. Ho, Reaction Design, R.C. Schmidt, Sandia National Laboratories |
2:20pm | MN+MS+PS+TF-TuA4 Detection of Metal Film Deposit Smoothness by a MEMS-NEMS Structure via Surface Plasmon Effects D.T. Wei, Wei & Assoc., A. Scherer, California Institute of Technology |
2:40pm | MN+MS+PS+TF-TuA5 Etching of High Aspect Ratio Structures in Si using SF@sub 6@-O@sub 2@-HBr and SF@sub 6@-O@sub 2@-Cl@sub 2@ Plasmas S. Gomez, J. Belen, University of California, Santa Barbara, M. Kiehlbauch, Lam Research Corporation, E.S. Aydil, University of California, Santa Barbara |
3:00pm | MN+MS+PS+TF-TuA6 Deep Reactive Ion Etching of Silicon Structures for Profile and Morphology Control R.J. Shul, M.G. Blain, S.G. Rich, S.A. Zmuda, Sandia National Laboratories |
3:20pm | MN+MS+PS+TF-TuA7 Fabrication of Wide-IF 200-300 GHz SIS Mixers with Suspended Metal Beam Leads Formed on SOI A.B. Kaul, B. Bumble, K.A. Lee, H.G. LeDuc, Jet Propulsion Laboratory, California Institute of Technology, F. Rice, J. Zmuidzinas, California Institute of Technology |
3:40pm | MN+MS+PS+TF-TuA8 Characterization of Polycrystalline AlN Film Quality Using Variable Angle Spectroscopic Ellipsometry L.-P. Wang, D.S. Shim, Q. Ma, V.R. Rao, E. Ginsburg, A. Talalyevsky, Intel Corp |