| AVS 51st International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | DI+PS-TuM1 Invited Paper Inductively Coupled Remote Nitrogen Plasma Treatment of Hf Based Gate Dielectrics for Improved Interface Stability on Si(100) T. Klein, University of Alabama |
| 9:00am | DI+PS-TuM3 In Situ Infrared Spectroscopy of High-k Dielectric Growth on Si (100) R.T. Brewer, M.-T. Ho, L. Ghoncharova, Rutgers University, M.P. Boleslawski, Aldrich Chemical Co., T. Gustafsson, E. Garfunkel, Y.J. Chabal, Rutgers University |
| 9:20am | DI+PS-TuM4 DFT Study of the Initial ALD Reactions of Hf(N(CH3)2)4 on the SiO2 and Si-H Surfaces: Mechanism, Kinetics, Vibrational Spectra and Interface Structure J.G. Han, C.B. Musgrave, Stanford University, M.J. Kelley, G.N. Parsons, North Carolina State University |
| 9:40am | DI+PS-TuM5 Development of Post Etching Process for Hf Based High-K Gate Dielectric W.S. Hwang, J.H. Chen, W.J. Yoo, D.S.H. Chan, National University of Singapore, Singapore, D.-L. Kwong, University of Texas at Austin |
| 10:00am | DI+PS-TuM6 Plasma-Enhanced Atomic Layer Deposition for Compositionally Controlled Metal Oxide Thin Films S.X. Lao, R.M. Martin, J.P. Chang, University of California, Los Angeles |
| 10:20am | DI+PS-TuM7 DFT Investigation of Initial HfO@sub 2@ Atomic Layer Deposition on Nitrided Silicon Surface Y. Xu, C.B. Musgrave, Stanford University |
| 10:40am | DI+PS-TuM8 Oxygen Transport Properties in Hafnium Silicate Films D. Starodub, L. Goncharova, E. Garfunkel, T. Gustafsson, Rutgers University, G. Bersuker, B. Foran, P. Lysaght, International Sematech |
| 11:00am | DI+PS-TuM9 Investigation of the Roles of Oxygen Plasma and Solvent in the Pulsed-Liquid Injection PE-MOCVD Deposition of Y@sub2@O@sub3@ High-@kappa@ Materials in MIM Structures C. Vallee, C. Durand, M. Derivaz, M. Kahn, M. Bonvalot, CNRS, France |
| 11:20am | DI+PS-TuM10 UV Activated Surface Preparation of Silicon for High-k Dielectric Deposition C.C. Finstad, A.J. Muscat, University of Arizona |
| 11:40am | DI+PS-TuM11 Annealing of Hafnium Oxide Grown on Silicon by Atomic Layer Deposition: Changes in Interfacial Structure A. Deshpande, University of Illinois at Chicago, R. Inman, G. Jursich, American Air Liquide, C. Takoudis, University of Illinois at Chicago |