AVS 51st International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session DI+PS-TuM

Paper DI+PS-TuM3
In Situ Infrared Spectroscopy of High-k Dielectric Growth on Si (100)

Tuesday, November 16, 2004, 9:00 am, Room 304C

Session: High-k Dielectrics: Growth and Processing
Presenter: R.T. Brewer, Rutgers University
Authors: R.T. Brewer, Rutgers University
M.-T. Ho, Rutgers University
L. Ghoncharova, Rutgers University
M.P. Boleslawski, Aldrich Chemical Co.
T. Gustafsson, Rutgers University
E. Garfunkel, Rutgers University
Y.J. Chabal, Rutgers University
Correspondent: Click to Email
We have used in situ, transmission infrared (IR) spectroscopy and ex-situ Medium Energy Ion Scattering (MEIS) to investigate the growth mechanisms of atomic layer deposition (ALD) of Al@sub 2@O@sub 3@ and HfO@sub 2@ on Si (100). The high-k materials were deposited by alternating exposures of organometallic precursors (trimethylaluminum for Al@sub 2@O@sub 3@ and tetrakis(ethylmethylamido)hafnium for HfO@sub 2@) and D@sub 2@O at ~300@super o@C. IR spectroscopy makes it possible to identify the adsorbed precursor products, the growth of the high-k films, and the formation of an interfacial layer, such as SiO@sub 2@. For ALD directly on hydrogen terminated Si (100) we observe the formation of interfacial SiO@sub 2@; moreover, several ALD exposure cycles are required before the high-k film can nucleate on the surface and begin to grow. Functionalizing the surface with a pretreatment of NH@sub 3@ results in high-k film growth from the first cycle exposure, and reduces the formation of interfacial SiO@sub 2@ by acting as a barrier and providing a nucleation layer for the high-k growth. In this talk, we will compare HfO@sub 2@ and Al@sub 2@O@sub 3@ growth.