| AVS 51st International Symposium | |
| Applied Surface Science | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| AS-MoP1 Producing Substrates for MALDI-MS by Chemomechanically Scribing Silicon and Glass. R. Blake, G. Jiang, C. Thulin, M.R. Linford, Brigham Young University |
| AS-MoP2 TOF-SIMS Investigation of Selected Excipients in Color Coated Placebo Tablets X. Dong, C.A.J. Kemp, Eli Lilly and Company |
| AS-MoP3 Cluster Primary Ion Bombardment Facilitates ToF-SIMS Analysis of Biological/Tissue samples V.S. Smentkowski, General Electric Global Research Center, A. Schnieders, Ion-Tof USA, Inc., F. Kollmer, Ion-Tof GmbH, R. Kersting, Tascon GmbH, Germany, J.A. Ohlhausen, M.R. Keenan, P.G. Kotula, Sandia National Laboratories |
| AS-MoP4 Using ToF-SIMS as a High Throughput Screening Tool for Lightweight Hydrogen Storage Materials J.P. Lemmon, J.-C. Zhao, V.S. Smentkowski, General Electric Global Research Center |
| AS-MoP5 Comparative Analysis of a Pt/Rh Catalyst Sample with TOF-SIMS and Laser-SNMS A. Schnieders, ION-TOF USA, Inc., F. Kollmer, ION-TOF GmbH, Germany, M. Fartmann, H.F. Arlinghaus, Universität Münster, Germany, V.S. Smentkowski, General Electric Global Research Center |
| AS-MoP6 Application of Time Interpolation to SIMS Isotopic Ratio Measurements D. Simons, K.J. Coakley, A.M. Leifer, National Institute of Standards and Technology |
| AS-MoP7 Carbon Mediation on the Growth of Self-Assembled Ge Quantum Dots on Si (100) by Ultra High Vacuum Chemical Vapor Deposition P.S. Chen, Electronics Research & Service Organization, Industrial Technology Research Institute, Taiwan, S.W. Lee, Industrial Technology Research Institute, Taiwan, M.-J. Tsai, Electronics Research & Service Organization, Industrial Technology Research Institute, Taiwan, C.W. Liu, Industrial Technology Research Institute, Taiwan |
| AS-MoP8 Field Emission Analysis and Optimization of Carbon Nanoflake Edge Emitters X. Zhao, R.A. Outlaw, J.J. Wang, M.Y. Zhu, D.M. Manos, B.C. Holloway, College of William and Mary |
| AS-MoP9 Ti Metal Cluster on the Carbon Nanotube S. Lee, H. Kim, J. Lee, B.Y. Choi, Y.S. Cho, Y. Kuk, Seoul National University, South Korea |
| AS-MoP10 Depth Resolution of Inverse Calculation from ADXPS to Depth Profile A. Tanaka, Physical Electronics, Japan, D.G. Watson, Physical Electronics USA |
| AS-MoP11 Study of the Oxidation Behavior of Aluminum and Aluminum Alloys Using X-Ray Photoelectron Spectroscopy G.D. Claycomb, P.M.A. Sherwood, Kansas State University |
| AS-MoP12 Chemical State Analysis Boron and Phosphorus on Si Wafer Surface Measured by TRXPS Y. Iijima, T. Tazawa, JEOL, Japan |
| AS-MoP13 XPS Characterization of Ingaalp/ingap Quantum Well Structures Y.J. Yoon, L.V. Yashina, B.Y. Kim, V. Kureshov, Samsung Electro-mechanics Co., Ltd, Korea |
| AS-MoP14 XPS, AFM, and Confocal Microscopy Data Correlation: Characterization of Polymer Blend Systems to Create a 3D Volume J.L. Fenton, K. Artyushkova, J. Farrar, J.E. Fulghum, The University of New Mexico |
| AS-MoP15 Auger Analysis of Corrosion Scale Formed on a Ni-Cr-Fe Alloy by Exposure to Supercritical Water at Elevated Temperature. S.A. Wight, J.E. Maslar, E.S. Windsor, NIST |
| AS-MoP16 Electronic Structure of Rare-Earth Oxoborates: A Photoemission Investigation A.J. Nelson, J.J. Adams, K.I. Schaffers, Lawrence Livermore National Laboratory |
| AS-MoP17 Photoelectron Spectroscopy Study of the Aging and Plasma Treatments Effects on PECVD a-SiC:H Films for Advanced Interconnects V. Jousseaume, O. Renault, CEA-DRT-LETI, France, G. Passemard, ST-Microelectronics, France |
| AS-MoP18 Thermally Nitrided Stainless Steels for Polymer Electrolyte Membrane Fuel Cell Bipolar Plates: Beneficial Modification of Passive Layer on AISI446 H.M. Meyer III, M.P. Brady, K.L. More, B. Yang, Oak Ridge National Laboratory, H. Wang, J.A. Turner, National Renewable Energy Laboratory |
| AS-MoP19 Preparation and Lithography of Monolayers on Silicon Surface and Their Molecular Recognition Y. Takahashi, Waseda University, Japan, N. Shirahata, National Institute for Materials Science, Japan, A. Hozumi, National Institute of Advanced Industrial Science and Technology, Japan, S. Asakura, Waseda University, Japan, T. Yonezawa, University of Tokyo, Japan |
| AS-MoP20 Importance of Binding Energy Reference Materials for Understanding the Chemistry of Oxidized-Iron Arsenic-Adsorbing Materials B.M. Sass, Battelle Columbus, M.H. Engelhard, D.R. Baer, Pacific Northwest National Laboratory |
| AS-MoP21 Analysis of Leed Images to Obtain Surface Geometries of Amines and Alcohols Adsorbed on the Si(100)-2x1 Surface J.K. Dogbe, S.M. Casey, University of Nevada, Reno |
| AS-MoP22 Surface Planarization Characteristics of WO3 Thin Film for Gas Sensing W.S. Lee, P.J. Ko, Chosun University, South Korea, Y.J. Seo, DAEBUL University, Korea |
| AS-MoP23 Scanning Capacitance Microscopy Study on the Stability of the Electrical Junctions Formed by Spike Annealing and Rapid Thermal Annealing M.-N. Chang, C.-Y. Chen, National Nano Device Laboratories, Taiwan |
| AS-MoP24 XPS Analysis Under External Stimuli S. Suzer, U.K. Demirok, G. Ertas, Bilkent University, Turkey |