High quality as-sputtered indium-tin oxide (ITO) films have been achieved by careful optimization of the process parameters@footnote 1@. Oxygen flow, deposition power, process pressure and deposition temperature were varied to achieve optimal resistivity and transmission characteristics of the ITO film. Resistivities below 300 µ@ohm@-cm and transmission of over 75% over most of the visible wavelength range of 400-800 nm, with a peak of 85% at about 550 nm, have been obtained for deposition temperatures below 180 @super o@C. For deposition temperatures of about 260 @super o@C, these numbers were improved to about 225 µ@ohm@-cm resistivity and over 90% transmission. The transmission numbers quoted are for the film plus the quartz substrate -- the film-only values exceed 95%. The thermal stability of the films was studied as a function of in-situ pre- and post-deposition annealing. It was seen that deposition of the ITO films at elevated temperatures improved thermal stability of the as-deposited films, and led to no further change in resistivity or transmission upon post-deposition annealing in atmosphere. ITO film properties vs. process parameters were also studied using two types of magnetron cathodes with maximum field strengths of a) 200 Oe, commonly used for non-magnetic materials, and b) 600 Oe, commonly used for magnetic materials. The purpose of changing cathode field strength was to determine whether lowering the plasma impedance by using a stronger field helped to lower the film resistivity, as reported by some researchers. We did not find any such correlation in our studies. @FootnoteText@ @footnote 1@ This study was performed at KDF, while the author was Director of Technology at KDF, 10 Volvo Drive, Rockleigh, NJ 07647.