AVS 51st International Symposium
    Thin Films Tuesday Sessions
       Session TF+NS-TuA

Paper TF+NS-TuA7
Nanoscale Structures and Devices Produced Using Energetic Atomic Beams

Tuesday, November 16, 2004, 3:20 pm, Room 303C

Session: Focused Beam Processing & Fabrication
Presenter: E.A. Akhadov, Los Alamos National Laboratory
Authors: E.A. Akhadov, Los Alamos National Laboratory
D. Read, Florida State University
A.S. Cavanagh, Los Alamos National Laboratory
A.H. Mueller, Los Alamos National Laboratory
J.C. Gregory, University of Alabama in Huntsville
G.P. Nordin, University of Alabama in Huntsville
M.A. Hoffbauer, Los Alamos National Laboratory
Correspondent: Click to Email
Nanoscale patterning of polymeric materials and low temperature thin film growth become possible using atomic species with kinetic energies similar to chemical bond strengths. We have developed a technique exclusive to LANL, called Energetic Neutral Beam Lithography/Epitaxy (ENABLE), that utilizes energetic neutral atoms for materials processing at the nanoscale. In this presentation, we demonstrate the use of atomic oxygen for nanoscale polymer etching and atomic nitrogen for templated nitride thin film growth. High-precision nanoscale formations (<50nm) with aspect ratios exceeding 35:1 were fabricated in polymer films. Taking advantage of the low temperature thin film growth afforded by ENABLE, we have fabricated AlN-based structures using pre-etched polymeric templates for potential electronic, photonic, and nanofluidic applications.