AVS 51st International Symposium
    Surface Science Wednesday Sessions
       Session SS2-WeM

Paper SS2-WeM9
Application of the Simplified Bond-Hyperpolarizability Model to Bulk Second- and Third-Harmonic Generation in Semiconductors

Wednesday, November 17, 2004, 11:00 am, Room 210C

Session: Semiconductor Surface and Interface Structure
Presenter: H.J. Peng, North Carolina State University
Authors: H.J. Peng, North Carolina State University
E.J. Adles, North Carolina State University
D.E. Aspnes, North Carolina State University
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Application of nonlinear optical (NLO) spectroscopies to the analysis of surfaces and buried interfaces of crystalline semiconductors requires an understanding of the contributions from the second- and third-harmonic generation (SHG, THG) from the bulk. THG is particularly relevant because for reasons of macroscopic symmetry THG is the lowest NLO effect that can be used to study the surfaces and interfaces of (001)Si, which underlies integrated-circuits technology. We show that the simplified bond-hyperpolarizability (SBHM) model that we previously developed to analyze surface and interface contributions to second- and fourth-harmonic generation data for Si provides an accurate description of bulk THG of Si with no adjustable parameters beyond amplitude scaling. The SHG contribution, which is nominally forbidden in Si, can be evaluated from the known linear-optic response and, contrary to some speculation, is found to be negligible for this material. These results are expected to be applicable to other semiconductors as well, thereby simplifying the analysis of surfaces and interfaces by NLO techniques.