Focused ion beam (FIB) systems and DualBeam (combined FIB-SEM) systems have become key tools in the high-resolution characterization of materials, most notably in the semiconductor and data-storage industries, but also extending to many other disciplines where localized sample preparation and analysis is required. Site-specific cross-sections and transmission electron microscope (TEM) samples through disparate materials can be prepared using FIB milling. On a DualBeam the SEM can be used to directly monitor the sample preparation, allowing the section to be precisely positioned relative to a sub-surface feature that is exposed during the sample preparation. In addition, high-resolution, high contrast STEM (scanning transmission electron microscopy) imaging is possible with the electron beam, enabling more problems to be solved in the DualBeam without resorting to the TEM. Ion beam and electron beam induced gas chemistry is also possible, enabling the localized deposition of conductors and insulators, and the selective etching of materials. These capabilities are used in characterization applications for surface protection and delineation of cross-section faces, and also allow integrated circuits to be rewired to debug or prototype the device. Similarly, micro- and nano-scale devices can also be created or modified by the FIB/DualBeam, enabling rapid investigations into novel structures that would be impractical to create by other methods.