| AVS 50th International Symposium | |
| Thin Films | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | TF-MoA1 Invited Paper The Application of Plasma for Metal Atomic Layer Deposition for Cu Interconnect Technology S.M. Rossnagel, H. Kim, IBM T.J. Watson Research Center |
| 2:40pm | TF-MoA3 Copper Atomic Layer Deposition Using In Situ-Generated Cu@sub 3@Cl@sub 3@ and Hydrogen Radicals M.D. Groner, S.M. George, University of Colorado |
| 3:00pm | TF-MoA4 Dynamic Equipment and Process Simulation for Atomic Layer Deposition Technology W. Lei, Y. Cai, L. Henn-Lecordier, G.W. Rubloff, University of Maryland |
| 3:20pm | TF-MoA5 Al@sub 2@O@sub 3@ Atomic Layer Deposition for the Enhancement of MEMS Performance and Reliability C.F. Herrmann, N.D. Hoivik, F.W. DelRio, V.M. Bright, Y.C. Lee, S.M. George, University of Colorado |
| 3:40pm | TF-MoA6 Invited Paper Processes and Properties of Porous CVD Low-k Materials Y. Travaly, M. Van Hove, G. Beyer, IMEC / SPDT / ITSMI, Belgium, K. Maex, IMEC / SPDT, Belgium |
| 4:20pm | TF-MoA8 Deposition of Low k OSG Films Exhibiting Enhanced Mechanical Properties by PECVD J.L. Vincent, R.N. Vrtis, A.S. Lukas, M.L. O'Neill, B.K. Peterson, M.D. Bitner, G.J. Karwacki, Air Products and Chemicals, Inc. |
| 4:40pm | TF-MoA9 Expanding Thermal Plasma for Low-k Dielectrics: Guiding the Film Chemistry by Means of Selected Dissociation Paths in the Plasma M. Creatore, Y. Barrell, W.M.M. Kessels, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
| 5:00pm | TF-MoA10 Photoresist Removal on Porous Low-k Materials Using an Energetic (100s of eV) Oxygen Neutral Beam D.J. Economou, Q. Wang, University of Houston, B. White, AMD and International SEMATECH, P.J. Wolf, Intel and International SEMATECH, T. Jacobs, Philips Semiconductors, J. Fourcher, International SEMATECH |