AVS 50th International Symposium
    Thin Films Monday Sessions
       Session TF-MoA

Paper TF-MoA4
Dynamic Equipment and Process Simulation for Atomic Layer Deposition Technology

Monday, November 3, 2003, 3:00 pm, Room 329

Session: Atomic Layer Deposition and Low-k
Presenter: W. Lei, University of Maryland
Authors: W. Lei, University of Maryland
Y. Cai, University of Maryland
L. Henn-Lecordier, University of Maryland
G.W. Rubloff, University of Maryland
Correspondent: Click to Email
While the self-limiting growth of atomic layer deposition (ALD) makes it a promising process for thin film deposition, the rapid precursor gas cycling required poses manufacturability challenges. We have developed dynamic simulation models for equipment and process behavior to explore the influence of detailed design on : (1) surface chemistry and resulting material quality; (2) manufacturing throughput; (3) materials utilization for environmental (ESH) and cost metrics; and (4) real-time sensor system design for integrated metrology and advanced process control. The dynamic simulators are flexible in accommodating a variety of process and surface chemistries as well as equipment designs. For a mini-chamber design motivated by manufacturing throughput requirements, we have compared operational modes based on static vs. dynamic gas flow, which shows ESH benefits for the former without sacrifice of throughput. The simulator reveals time-dependence analysis of ALD dynamics as a function of surface chemistry and equipment design, providing guidance for integrated metrology. Based on these results, we are developing a novel ALD reactor for process and metrology development which emulates the conditions found in emerging commercial reactors. @FootnoteText@ Supported by the National Institute of Science and Technology and by the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing.