| AVS 50th International Symposium | |
| Surface Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SS1-WeM1 H Transfer and Ge/Si Site Exchange during Germane Adsorption at Si(001) T. Murata, M. Suemitsu, Tohoku University, Japan |
| 8:40am | SS1-WeM2 Surface Interaction of SiH@sub 3@ Radicals with Amorphous Silicon: Temperature Dependence of the SiH@sub 3@ Surface Reactivity and the Surface Hydride Composition W.M.M. Kessels, J.P.M. Hoefnagels, P.J. Van den Oever, Y. Barrell, A.H.M. Smets, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands |
| 9:00am | SS1-WeM3 Interface Structure of an Ultrathin SiO@sub 2@ Film Fabricated by Ozone on Si(100) K. Nakamura, S. Ichimura, National Institute of Advanced Industrial Science and Technology (AIST), Japan |
| 9:20am | SS1-WeM4 Application of MIR-FTIR to Multilayered Structures Built on Silicon Substrate: TiCN and Al Deposition and Effects of Hydrogen Diffusion S. Bocharov, A.V. Teplyakov, University of Delaware |
| 9:40am | SS1-WeM5 Indium Phosphide (001)-(2x1): Evidence for a Hydrogen-Stabilized Surface Reconstruction G. Chen, D. Cheng, D. Tobin, Y. Sun, University of California, Los Angeles, K. Raghavachari, Indiana University, R.F. Hicks, University of California, Los Angeles |
| 10:00am | SS1-WeM6 Chemically Resolved STM Imaging of Al on Al@sub 0.1@Ga@sub 0.9@As(001)-c(2x8)/(2x4) M.J. Hale, D.L. Winn, A.C. Kummel, University of California, San Diego |
| 10:20am | SS1-WeM7 Atomistic Mechanisms of Fermi-level Pinning at the Oxide-Semiconductor Interface J.Z. Sexton, M.J. Hale, D.L. Winn, University of California, San Diego, M. Passlack, A.A. Demkov, Motorola Inc., A.C. Kummel, University of California, San Diego |
| 10:40am | SS1-WeM8 Coupling Reactions of Trifluoroethyl Iodide on GaAs(100) N.T. Kemp, N. Paris, N.K. Singh, The University of New South Wales, Australia |