AVS 50th International Symposium
    Surface Science Wednesday Sessions
       Session SS1-WeM

Paper SS1-WeM4
Application of MIR-FTIR to Multilayered Structures Built on Silicon Substrate: TiCN and Al Deposition and Effects of Hydrogen Diffusion

Wednesday, November 5, 2003, 9:20 am, Room 328

Session: Adsorption on Semiconductor Surfaces
Presenter: A.V. Teplyakov, University of Delaware
Authors: S. Bocharov, University of Delaware
A.V. Teplyakov, University of Delaware
Correspondent: Click to Email
A combination of infrared spectroscopy, thermal desorption mass spectrometry, ToF-SIMS and AFM was used to analyze deposition of TiCN and Al from CVD precursors onto a Si(100)-2x1 surface. The TiCN films were easily deposited from tetrakis-(dimethylamino)-titanium (TDMAT) on a clean Si(100)-2x1 surface at slightly elevated temperatures and pressures of 2 microtorr and even lower. Monolayer chemistry does not lead to TiCN deposition. On the other hand, at 593K deposition of TiCN can be easily achieved. The onset of the deposition process coinsides with the thermal decomposition of surface species resulting from the monolayer reactions. The unusual application of MIR-FTIR to study multilayered structures was successfully performed for TiCN and Al deposition onto a TiCN-precovered Si(100). Interestingly, not only surface chemistry of the CVD precursors on TiCN, but also the transformation of the TiCN/Si interface can be followed by such an approach. Hydrogen diffusion from surface decomposition was shown to play a significant role in the formation of the multilayered structure. It was also observed that the diffusion of hydrogen atoms produced by hydrogen dissociation on a hot tungsten filament drives hydrogen towards TiCN/Si interface.