| AVS 50th International Symposium | |
| Semiconductors | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SC-MoM1 Invited Paper III-Nitride Epitaxy on Oxide Substrates: New Understanding and Novel Device Alternatives W.A. Doolittle, Georgia Institute of Technology |
| 9:20am | SC-MoM4 Ion-Beam-Assisted Molecular Beam Epitaxy of GaN B. Cui, I.P. Steinke, P.I. Cohen, University of Minnesota |
| 9:40am | SC-MoM5 Optimizing AlGaN-GaN Heterostructures by MOCVD for Microwave Electronics M.E. Aumer, D.B. Thomson, D.P. Partlow, R.C. Clarke, Northrop Grumman, S. Cho, G.W. Rubloff, R.A. Adomaitis, University of Maryland |
| 10:00am | SC-MoM6 Improvement of Optical and Electrical Properties in Blue Light-Emitting Diodes with InGaN-based Triangular-Shaped Quantum Wells R.J. Choi, H.-W. Ra, Y.B. Hahn, H.J. Lee, E.K. Suh, Chonbuk National University, Korea |
| 10:20am | SC-MoM7 Optical Studies on the Incorporation of Carbon as a Dopant in Cubic GaN J.A.N.T. Soares, Universidade de São Paulo, Brazil, J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, M.J.S.P. Brasil, Universidade Estadual de Campinas, Brazil, A.M. Santos, O.C. Noriega, J.R. Leite, Universidade de São Paulo, Brazil, D.J. As, U. Köhler, S. Potthast, D.G. Pacheco-Salazar, Universität Paderborn, Germany |
| 10:40am | SC-MoM8 Effect of Substrate Temperature on Crystal Orientation and Residual Stress in RF Sputtered Gallium Nitride Films T. Hanabusa, K. Kusaka, K. Tominaga, Tokushima University, Japan |
| 11:00am | SC-MoM9 Formation of Zinc-blende-structure GaN Thin Films on Si Substrates by Radio Frequency Planar Magnetron Sputter Deposition J.H. Kim, P.H. Holloway, University of Florida |