AVS 50th International Symposium
    Semiconductors Monday Sessions
       Session SC-MoM

Paper SC-MoM6
Improvement of Optical and Electrical Properties in Blue Light-Emitting Diodes with InGaN-based Triangular-Shaped Quantum Wells

Monday, November 3, 2003, 10:00 am, Room 321/322

Session: Heteroepitaxy of Wide Bandgap Semiconductors
Presenter: Y.B. Hahn, Chonbuk National University, Korea
Authors: R.J. Choi, Chonbuk National University, Korea
H.-W. Ra, Chonbuk National University, Korea
Y.B. Hahn, Chonbuk National University, Korea
H.J. Lee, Chonbuk National University, Korea
E.K. Suh, Chonbuk National University, Korea
Correspondent: Click to Email
Improvement of optical and electrical properties in blue light-emitting diodes with InGaN-based triangular shaped quantum wells We report the electrical and optical properties of blue light-emitting diodes (LEDs) fabricated by using InGaN-based multiple triangular quantum wells (QWs). The triangular-shaped band structure in the QW was obtained by modulating the In composition in the InGaN well. LEDs with the triangular QWs were compared with rectangular ones in terms of current-voltage (I-V) characteristics, output power, and electroluminescence (EL) spectrum. Compared to the LEDs with conventional rectangular QW structures, the triangular QW LEDs showed a higher intensity and a narrower linewidth of electrical luminescence (EL), a lower operation voltage, and a stronger light-output power. EL spectra of the triangular-QW-based LEDs also showed that the peak energy is nearly independent of the injection current and temperature, indicating that the triangular QW LED is more efficient and stable than rectangular one.