| AVS 50th International Symposium | |
| QSA-10 Topical Conference | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | QS-MoA1 Invited Paper Metrology Needs for Ultrathin Films in the Wafer Processing Industry. What is Needed? What is Available? C.R. Brundle, C.R. Brundle and Associates, C.A. Evans, Evans FWA |
| 3:00pm | QS-MoA4 Invited Paper Intercomparison of Silicon Dioxide Thickness Measurements Made by Multiple Techniques - The Route to Accuracy M.P. Seah, National Physical Laboratory, UK |
| 4:00pm | QS-MoA7 Comparative Thickness Measurements of SiO@sub2@/Si Films for Thicknesses less than 10 nm T. Jach, J.A. Dura, N.V. Nguyen, J. Swider, National Institute of Standards and Technology, G. Cappello, Institute Curie, France, C. Richter, National Institute of Standards and Technology |
| 4:20pm | QS-MoA8 The Thickness and Composition of Ultra-thin SiO@sub 2@ Layers on Si C. Van der Marel, M.A. Verheijen, Y. Tamminga, Philips Electronics, The Netherlands, R.H.W. Pijnenburg, Technical University Eindhoven, The Netherlands, N. Tombros, State University of Groningen, The Netherlands, F. Cubaynes, Philips Research, IMEC, Belgium |
| 4:40pm | QS-MoA9 Characterization and Metrology for High k Materials using Parallel Angular Resolved XPS (PARXPS) G. Conti, C.C. Wang, Y. Uritsky, Applied Materials, Inc., C.R. Brundle, C.R. Brundle and Associates |
| 5:00pm | QS-MoA10 Multivariate Statistical Analysis of Spatially Compressed Time-of-Flight Secondary Ion Mass Spectrometry Images@footnote 1@ J.A. Ohlhausen, M.R. Keenan, P.G. Kotula, D.E. Peebles, Sandia National Laboratories |