AVS 50th International Symposium
    QSA-10 Topical Conference Monday Sessions
       Session QS-MoA

Paper QS-MoA7
Comparative Thickness Measurements of SiO@sub2@/Si Films for Thicknesses less than 10 nm

Monday, November 3, 2003, 4:00 pm, Room 320

Session: Thin-Film Metrology
Presenter: T. Jach, National Institute of Standards and Technology
Authors: T. Jach, National Institute of Standards and Technology
J.A. Dura, National Institute of Standards and Technology
N.V. Nguyen, National Institute of Standards and Technology
J. Swider, National Institute of Standards and Technology
G. Cappello, Institute Curie, France
C. Richter, National Institute of Standards and Technology
Correspondent: Click to Email
The metrology of gate dielectric thicknesses using different methods for layers below 10 nm is still subject to uncertainties. We report on a comparative measurement of SiO@sub2@/Si dielectric film thickness (t<10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm - 7 nm were characterized by XPS with grazing incidence x-rays at 1.8 keV, with cold neutron reflectometry (@lambda@=0.475 nm), and with spectroscopic ellipsometry over 1.5 eV