AVS 50th International Symposium | |
Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | PS-TuM1 Attractive Interactions Between Negatively Charged Dust Particles in a Plasma G.A. Hebner, M.E. Riley, Sandia National Laboratories |
8:40am | PS-TuM2 Measurement of Electrical Fields Around Dissimilar Materials Exposed to a Discharge E.V. Barnat, G.A. Hebner, Sandia National Laboratories |
9:00am | PS-TuM3 Invited Paper Plasma Processing Diagnostic Methods and Studies: A Historical Perspective V.M. Donnelly, University of Houston |
9:40am | PS-TuM5 Absolute SiCl@sub X@ Densities in Silicon Gate Etching Plasmas Determined by Broad Band UV Absorption M. Kogelschatz, CNRS/LSP, France, G. Cunge, CNRS/LTM, France, N. Sadeghi, CNRS/LSP, France, O. Joubert, L. Vallier, CNRS/LTM, France |
10:20am | PS-TuM7 In-situ Processing Memory Effects for Confined vs. Unconfined Plasmas E.A. Hudson, R. Annapragada, D. Keil, K. Takeshita, Lam Research Corp. |
10:40am | PS-TuM8 Plasma Diagnostics and Thin Film Characterization in Dielectric Etching: Understanding the Role of Fluorine Chemistry B. Ji, S.A. Motika, P.R. Badowski, S. Dheandhanoo, E.J. Karwacki, J.R. Stets, Air Products and Chemicals, Inc., C. Timmons, D.W. Hess, Georgia Institute of Technology, E.C. Benck, National Institute of Standards and Technology, Y. Ye, Applied Materials, Inc. |
11:00am | PS-TuM9 Loss Kinetics of CF@sub x@ Radicals and F Atoms in the Afterglow of Inductively Coupled Pulsed Plasmas X. Wu, J.L. Cecchi, University of New Mexico |
11:20am | PS-TuM10 Effect of an Applied-phase of Bias Pulse on a Charge Reduction on a SiO@sub 2@ Hole Exposed to Plasma Etching in a Two-frequency CCP T. Ohmori, T.K. Goto, T. Makabe, Keio University, Japan |
11:40am | PS-TuM11 Analysis of Downstream Etch Chemistry in Ion-Ion and Electron-Ion Cl2 Discharges A.K. Jindal, A.J. Prengler, L.J. Overzet, M.J. Goeckner, University of Texas at Dallas |