| AVS 50th International Symposium | |
| Electronic Materials and Devices | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-WeA1 Electron Transport Mechanisms in Thin B-doped CVD Diamond Films J.E. Yater, A. Shih, J.E. Butler, P.E. Pehrsson, Naval Research Laboratory |
| 2:20pm | EM-WeA2 On the Peculiarity of Depletion Layer in Diamond pn-junction Y. Koide, National Institute for Materials Science (NIMS), Japan |
| 2:40pm | EM-WeA3 Highly Conductive N-type Ultrananocrystalline Diamond: Materials Properties and Devices J.E. Gerbi, O. Auciello, J. Birrell, Argonne National Laboratory, S. Curat, University College London, UK, D.M. Gruen, Argonne National Laboratory, R.B. Jackman, O.A. Williams, University College London, UK, J.A. Carlisle, Argonne National Laboratory |
| 3:00pm | EM-WeA4 Raman Spectroscopy of Ultrananocrystalline Diamond Thin Films J. Birrell, J.E. Gerbi, O. Auciello, J. Johnson, X. Xiao, J.A. Carlisle, Argonne National Laboratory |
| 3:20pm | EM-WeA5 Silicon on Diamond Technology A. Aleksov, N. Govindaraju, F. Okuzumi, G.N. Yushin, North Carolina State University, S.D. Wolter, J.T. Prater, Army Research Office / AMSRL- RO-PM, Z. Sitar, North Carolina State University |
| 3:40pm | EM-WeA6 Metallizing a Semiconductor Surface with Hydrogen P.G. Soukiassian, V. Derycke, Commissariat à l'Energie Atomique, France, F. Amy, Y.J. Chabal, Agere Systems, M. D'angelo, H. Enriquez, V.Yu. Aristov, M. Silly, Commissariat à l'Energie Atomique, France, M. Pedio, P. Perfetti, Insituto di Struttura della Materia, Italy |
| 4:00pm | EM-WeA7 Macroscopic and Microscopic Electronic Behavior of Cubic Inclusions in 4H-SiC K.-B. Park, Y. Ding, J.P. Pelz, The Ohio State University, K.C. Palle, M.K. Mikhov, B.J. Skromme, Arizona State University, A. Los, M.S. Mazzola, Mississippi State University |
| 4:20pm | EM-WeA8 Improved Titanium / Nickel Ohmic Contacts on N-Type 4H Silicon Carbide J.H. Park, P.H. Holloway, University of Florida |
| 4:40pm | EM-WeA9 Correlation Between Electrical and Microstructural Properties of Low Resistance TiAl-based Ohmic Contacts to p-type 4H-SiC S. Tsukimoto, K. Nitta, M. Moriyama, M. Murakami, Kyoto University, Japan |