The p-type Diamond has been easily obtained by doping with boron, and high-quality p-type diamond film was often grown on (100) diamond substrates by a microwave plasma-assisted chemical vapor deposition (MPCVD) technique. Recently, a growth method fabricating undeniable n-type diamond films was established by the MPCVD technique. The fabrication of the pn-junction structure widened a possibility of application of diamond to electronic and photonic devices. Therefore, understanding of characteristics of diamond pn-junction is our mandatory. Dependence of temperatures on carrier densities measured by Hall effect provided the ionization energies of P donor and B acceptor to be as large as 600 meV and 370 meV, respectively. Since both the dopants have deep nature, characteristics of the pn-junction are predicted to be very different from that of pn-junction which involves shallow dopants The purpose of the present paper is, as a first step to understand the pn-junction physics of diamond, to analyze the deep dopant effect of the pn-junction involving deep P donor and B acceptor. The theoretical analysis will predict a limit of performance of diamond bipolar transistor, in which the deep nature of donor and acceptor will play an important role. The analysis of space charge and carrier profiles in the pn-junction was simply carried out by solving one-dimensional Poisson equation including compensation and carrier distribution. Profiles of ionized dopants and carriers in pn-junction of diamond with deep phosphorus donor and boron acceptor were calculated. Widths of depletion layer were around two times longer than those of space charge layer since there existed a transition region at the depletion layer edge. The difference between both the widths was reduced with increasing temperatures. It was predict that a static saturation property of bipolar pnp-junction transistor was affected by the deep nature of dopants.