AVS 50th International Symposium
    Electronic Materials and Devices Thursday Sessions

Session EM-ThM
Materials for Interconnects and Contacts to Semiconductors

Thursday, November 6, 2003, 8:20 am, Room 321/322
Moderator: S.E. Mohney, The Pennsylvania State University


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Click a paper to see the details. Presenters are shown in bold type.

8:20am EM-ThM1 Invited Paper
Self-aligned Silicides for Ohmic Contacts in CMOS Technology: TiSi@sub 2@, CoSi@sub 2@ and NiSi
S.-L. Zhang, KTH, Sweden
9:00am EM-ThM3
Ni-Si Thin Films Reactions at Low Temperatures: Phase Identification and Sequence Characterization
C. Coia, École Polytechnique de Montréal, Canada, C. Lavoie, IBM Research, M. Tremblay, École Polytechnique de Montréal, Canada, C. Detavernier, F.M. d'Heurle, IBM Research, P. Desjardins, École Polytechnique de Montréal, Canada
9:20am EM-ThM4 Invited Paper
Development of Ohmic Contact Materials for Compound Semiconductors
M. Murakami, M. Moriyama, S. Tsukimoto, Kyoto University, Japan
10:00am EM-ThM6
Indium-Based Ohmic Contacts to n-Type Gallium Antimonide
J.A. Robinson, S.E. Mohney, The Pennsylvania State University
10:20am EM-ThM7
Long and Short Term Thermal Stability of Gate Metallizations on GaN/AlGaN/GaN Heterostructures
E.D. Readinger, S.E. Mohney, Penn State University, R. Therrien, Nitronex Corp.
10:40am EM-ThM8
Compositional Shift in Al@sub x@Ga@sub 1-x@N Induced by Reaction with Metallic Thin Films
B.A. Hull, E.D. Readinger, S.E. Mohney, The Pennsylvania State University, U. Chowdhury, R.D. Dupuis, The University of Texas at Austin
11:00am EM-ThM9
Low Temperature Chemical Vapor Deposition and Characterization of Ultra-thin Ruthenium for Copper Diffusion Barriers in ULSI Interconnects
Q. Wang, Y.-M. Sun, D. Gay, J.M. White, J.G. Ekerdt, University of Texas at Austin
11:20am EM-ThM10
Evaluating Ruthenium Thin Film Deposited on Silicon as a Directly Plate-able Cu Diffusion Barrier
O. Chyan, University of North Texas, T.G. Hurd, Texas Instruments, R.M. Wallace, M.J. Kim, R. Chan, T. Arunagiri, University of North Texas
11:40am EM-ThM11
ZrB@sub 2@ Diffusion Barriers: Conformal CVD Below 400 °C
E.J. Klein, D.-Y. Kim, S. Jayaraman, G.S. Girolami, J.R. Abelson, University of Illinois at Urbana-Champaign