| AVS 50th International Symposium | |
| Electronic Materials and Devices | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM+SC-MoA1 Invited Paper Localized Defect States, Impurities, and Doping in Al@sub x@Ga@sub 1-x@N Epilayers S.T. Bradley, Ohio State University |
| 2:40pm | EM+SC-MoA3 Contactless Characterization of High Electron Mobility Transistor Structures using Surface Photovoltage Spectroscopy S. Solodky, Tel Aviv University, Israel, A. Khramtsov, Ben-Gurion University, Israel, T. Baksht, Tel Aviv University, Israel, M. Leibovitch, Gal-El (MMIC), Israel, Hava, Ben-Gurion University, Israel, Y. Shapira, Tel Aviv University, Israel |
| 3:00pm | EM+SC-MoA4 Atomic Bonding and Electronic Changes at InGaAs/InP Heterojunctions P.E. Smith, S.H. Goss, S.T. Bradley, L.J. Brillson, M.K. Hudait, Y. Lin, S.A. Ringel, The Ohio State University, S.W. Johnson, Sandia National Laboratories |
| 3:20pm | EM+SC-MoA5 Invited Paper Nanoscale Electronic Characterization of Semiconductors: from Operating Devices to Atomic Scale Defects Y. Rosenwaks, R. Shikler, Tel-Aviv University, Israel, Th. Glatzel, S. Sadewasser, Hahn-Meitner Institut, Germany |
| 4:00pm | EM+SC-MoA7 STM Observation of Subsurface Boron Dopants on the Si(001)-2x1 Clean Surface M. Nishizawa, L. Bolotov, T. Kanayama, National Institute of Advanced Industrial Science and Technology, Japan |
| 4:20pm | EM+SC-MoA8 Surface Defects After the Growth of Highly P and Sb Doped Si G.G. Jernigan, P.E. Thompson, US Naval Research Laboratory |
| 4:40pm | EM+SC-MoA9 The Effect of Strain on Impurity States in Si and Methods of Calculation Thereof A. Rockett, D.D. Johnson, University of Illinois, B.R. Tuttle, University of Pennsylvania, S.V. Khare, University of Illinois |
| 5:00pm | EM+SC-MoA10 New Mechanism for Coupling between Properties of Interfaces and Bulk Semiconductors K. Dev, E.G. Seebauer, University of Illinois at Urbana Champaign |