AVS 50th International Symposium
    Electronic Materials and Devices Monday Sessions
       Session EM+SC-MoA

Paper EM+SC-MoA10
New Mechanism for Coupling between Properties of Interfaces and Bulk Semiconductors

Monday, November 3, 2003, 5:00 pm, Room 321/322

Session: Defects and Interfaces in Electronic Materials and Devices
Presenter: K. Dev, University of Illinois at Urbana Champaign
Authors: K. Dev, University of Illinois at Urbana Champaign
E.G. Seebauer, University of Illinois at Urbana Champaign
Correspondent: Click to Email
A new mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profiles deep within the semiconductor bulk by drastically changing the effective interfacial boundary condition for annihilation of charged interstitial atoms formed during bombardment. Kinetic measurements of band bending evolution during annealing show that the bending persists for substantial periods even above 1000 C. Unusually low activation energies for the evolution point to a distribution of energies for healing of bombardment-generated interface defects. The transformations take place at temperatures higher than those characterizing other defects known to exist at the Si-SiO2 interface. The findings have significant implications for pn junction formation during CMOS device processing.