| AVS 50th International Symposium | |
| Applied Surface Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | AS-WeM1 Invited Paper Spectroscopic Characterization of High-k Dielectrics: Applications to Interface Electronic Structure and Stability Against Chemical Phase Separation G. Lucovsky, Cristiano Krug, North Carolina State University |
| 9:00am | AS-WeM3 Effect of Nitrogen on Interface Stability of Plasma Enhanced Chemical Vapor Deposition of Hafnium Oxide on Si(100) P. Chen, H. Bhandari, T.M. Klein, The University of Alabama |
| 9:20am | AS-WeM4 High-k Al@sub 2@O@sub 3@-HfO@sub 2@ Layers for CMOS Applications Studied by XPS and ToF-SIMS R.G. Vitchev, L. Houssiau, J.J. Pireaux, Facultes Universitaires Notre-Dame de la Paix, Belgium |
| 9:40am | AS-WeM5 Materials Characterization and Processing Effects on Hafnium-based Gate Dielectrics W.R. Nieveen, Charles Evans & Associates/Evans Analytical Group, P.S. Lysaght, International SEMATECH, G. Goodman, I. Mowat, B. Schueler, Charles Evans & Associates/Evans Analytical Group, J.A. Bennett, B. Foran, M. Gardner, R.W. Murto, H.R. Huff, International SEMATECH |
| 10:00am | AS-WeM6 Synchrotron UPS and EXAFS Analysis of High-k and Si Interfaces Y.-S. Lin, R. Puthenkovilakam, J.P. Chang, University of California, Los Angeles |
| 10:20am | AS-WeM7 Determination of ToF Medium Energy Backscattering Capabilities for Interfacial Analysis R.D. Geil, B.R. Rogers, D.W. Crunkleton, Z. Song, R.A. Weller, Vanderbilt University |
| 10:40am | AS-WeM8 Investigation of PECVD TiO@sub 2@ on Silicon P.R. McCurdy, L. Sturgess, S. Kohli, E.R. Fisher, Colorado State University |