AVS 50th International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeM

Paper AS-WeM3
Effect of Nitrogen on Interface Stability of Plasma Enhanced Chemical Vapor Deposition of Hafnium Oxide on Si(100)

Wednesday, November 5, 2003, 9:00 am, Room 324/325

Session: High-K Materials Interface Analysis
Presenter: P. Chen, The University of Alabama
Authors: P. Chen, The University of Alabama
H. Bhandari, The University of Alabama
T.M. Klein, The University of Alabama
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Hafnium oxide is a potential high dielectric constant material for use in field effect transistor gate applications. Interface quality, especially for chemical vapor deposited films, is a concern, however, and is the motivation for the introduction of nitrogen. Plasma enhanced chemical vapor deposition (PECVD) was used to grow hafnium oxide thin films on Si using Hf tert-butoxide and N@sub 2@O or N@sub 2@ remote plasma. Upto 6 at.% N was obtained using a N@sub 2@/He plasma. Angle resolved x-ray photoelectron spectroscopy indicates the nitrogen is located at the oxide/Si interface. Stability of the interface is enhanced with nitrogen treatment showing a smaller increase in film thickness after annealing in argon.