AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeM

Paper TF-WeM6
The Anneal Behavior of Reactively Sputtered HfN Films

Wednesday, November 5, 2003, 10:00 am, Room 329

Session: Optical Thin Films and Photovoltaics I
Presenter: J. Lannon Jr., MCNC Research and Development Institute
Authors: J. Lannon Jr., MCNC Research and Development Institute
C.C. Pace, MCNC Research and Development Institute
S. Goodwin, MCNC Research and Development Institute
S. Solomon, Acumen Consulting
P. Bryant, Santa Barbara Infrared, Inc.
J. Oleson, Santa Barbara Infrared, Inc.
Correspondent: Click to Email
This article reports electrical, optical, structural and thermo-physical properties of reactively sputtered HfN films with respect to elevated-temperature annealing. All metal nitride films were sandwiched between sputtered Si3N4 films. The resulting reduction in electrical resistivity with anneal is explained by a combination of XPS, RBS and SIMS analyses, and the physical mechanisms responsible for the observed anneal behavior are discussed. The negative TCR is also explained. Infrared optical properties of these film stacks were investigated and found to show the expected correlation with electrical properties, while the anneal behavior was found to exhibit anomalies that were independent of the as-deposited properties.