AVS 50th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuA

Paper TF-TuA6
Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering

Tuesday, November 4, 2003, 3:40 pm, Room 329

Session: Transparent Conducting Oxides
Presenter: T. Moriga, The University of Tokushima, Japan
Authors: T. Moriga, The University of Tokushima, Japan
Y. Hayashi, The University of Tokushima, Japan
K. Kondo, The University of Tokushima, Japan
K. Matsuo, The University of Tokushima, Japan
H. Fukumoto, The University of Tokushima, Japan
K. Murai, The University of Tokushima, Japan
K. Tominaga, The University of Tokushima, Japan
I. Nakabayashi, The University of Tokushima, Japan
Correspondent: Click to Email
The films of ZnO-SnO@sub 2@ system were deposited on glass substrates by simultaneous DC magnetron sputtering apparatus, where ZnO and SnO@sub 2@:Sb (Sb@sub 2@O@sub 5@ 3wt% doped) targets were faced each other. The substrate temparature were maintained at 150 and 250°C. As an experimental parameter, current ratio @delta@, ZnO target current divided by the sum of ZnO and SnO@sub 2@:Sb target currents, was adopted. Monophasic amorphous transparent films appeared for Zn/(Sn+Zn)=0.50-0.73. At Zn/(Sn+Zn)=1/2 (@delta@=0.62), 2/3 (@delta@=0.73) and any other ratio in as-deposited films, neither crystalline ZnSnO@sub 3@ nor Zn@sub 2@SnO@sub 4@ was obtained. Minimum resistivity was found at @delta@=0.50, whose composition was approximately SnO@sub 2@ZnSnO@sub 3@. Amorphous tin oxide coexisting with amorphous zinc stannate ZnSnO@sub 3@ would have an important role to reduce the resistivity. Resistivity increased linearly with an increase of the current ratio, until the composition reached the zinc stannate Zn@sub 2@SnO@sub 4@.