AVS 50th International Symposium
    Thin Films Thursday Sessions
       Session TF-ThM

Paper TF-ThM10
Low Temperature Nitride and Oxide Thin Film Growth using an Energetic Atom Source

Thursday, November 6, 2003, 11:20 am, Room 329

Session: Modeling & Fundamentals in Thin Film Deposition
Presenter: A.H. Mueller, Los Alamos National Laboratory
Authors: A.H. Mueller, Los Alamos National Laboratory
E.A. Akhadov, Los Alamos National Laboratory
M.A. Hoffbauer, Los Alamos National Laboratory
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Depositing one or more metals on a substrate exposed to an energetic neutral atom beam allows for the growth of high quality oxide and nitride films at low temperatures. The unique surface chemistry afforded by the exposure of the substrate to oxygen or nitrogen atoms possessing kinetic energies between 1 and 5 eV allows the deposition of dielectric and semiconducting films on materials that would undergo thermal decomposition under the conditions necessary for conventional thin film growth (e.g. CVD, sputtering, laser ablation, etc.). This low temperature epitaxy technique, called Energetic Neutral Atom Beam Lithography/ Epitaxy (ENABLE), permits the growth of semiconducting nitride and dielectric oxide films on substrate surfaces patterned by an organic polymer, as well as substrates consisting entirely of low meting point materials. The crystallinity, optical and electrical properties of ENABLE grown films have been examined using numerous techniques including XRD, TEM, photoluminescence spectroscopy, and four point probe resistance measurements. Results of film deposition on various substrate materials, including patterned film deposition, will be discussed.