AVS 50th International Symposium
    QSA-10 Topical Conference Tuesday Sessions
       Session QS-TuP

Paper QS-TuP7
Characterization of Buried Nanowire by X-ray Standing Wave Method

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Aspects of Quantitative Surface Analysis
Presenter: A. Saito, Osaka University and RIKEN harima Institute, Japan
Authors: A. Saito, Osaka University and RIKEN harima Institute, Japan
K. Matoba, Osaka University, Japan
J. Maruyama, Osaka University, Japan
W. Yashiro, National Institute of Advanced Industrial Science and Technology, Japan
T. Ohashi, Osaka University, Japan
H. Takaki, Osaka University, Japan
K. Takami, Osaka University, Japan
M. Akai-Kasaya, Osaka University, Japan
Y. Kuwahara, Osaka University, Japan
Y. Yoda, Japan Synchrotron Radiation Research Institute
O. Sakata, Japan Synchrotron Radiation Research Institute
K. Miki, National Institute for Materials Science, Japan
M. Aono, Osaka University, Japan
Correspondent: Click to Email
A perfect bismuth atomic nanowire on a clean Si(001) surface has recently attracted great interests.@footnote 1@ The STM studies showed that this wire is qualitatively different from the other atomic wires that are formed by group-III or -V elements at the initial stage of growth on Si(001): the Bi wire is free of kinks or defects, the width of 1 nm is kept for more than 400 nm long, and the wire appears to be rigidly embedded within the surface, not as adsorbates. Although X-ray photoelectron diffraction and the theoretical analysis were applied to reveal the Bi wire structure in UHV condition, the wire in the buried interface can be hardly estimated because of the methodological difficulty, despite its importance in application. X-ray standing wave (XSW) method is suitable for this ordered, dilute, and embedded system. This method is based on to excite selectively a specific element and to control the X-ray wave field in the substrate crystal under diffracting condition. Since the spatial controllability of the wave field is precise in about 0.001 nm (0.01Å), the atomic site of the element can be determined quantitatively with respect to the substrate Si lattice plane. In this paper, we present the XSW analysis of the Bi nanowire, where the Bi atomic site was estimated and compared among three different conditions (UHV, amorphous Si cap, epitaxial Si cap). The same analytical method was available for characterization of the low-dimensional system with the different capping layers by use of the third generation synchrotron radiation source. @FootnoteText@@footnote 1@J.H.G.Owen et al.,Phys.Rev.Lett.88,(2002) 226104.