AVS 50th International Symposium
    QSA-10 Topical Conference Tuesday Sessions
       Session QS-TuP

Paper QS-TuP11
Quantitative Image Analysis of Low-energy Electron Diffraction Patterns to Obtain Surface Geometries of Amines Adsorbed on the Si(100)-(2x1) Surface

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Aspects of Quantitative Surface Analysis
Presenter: J.K. Dogbe, University of Nevada, Reno
Authors: J.K. Dogbe, University of Nevada, Reno
S.M. Casey, University of Nevada, Reno
Correspondent: Click to Email
Experimental and computational low-energy electron diffraction (LEED) intensity vs. voltage (IV) curves were used to analyze the surface geometries of amines adsorbed on the Si(100)-(2x1) surface. Both the clean silicon surface and the ammonia-covered surface were used as calibration systems. For silicon, the LEED IV curves obtained agree well with literature data to within experimental uncertainty. The results for ammonia adsorption are compared to results from recent photoelectron diffraction studies of this surface. Results of LEED IV probing of methylamine adsorption will be presented and compared to computational treatments of probable reaction pathways for this class of molecule on silicon.