AVS 50th International Symposium
    Microelectromechanical Systems (MEMS) Wednesday Sessions
       Session MM-WeM

Paper MM-WeM4
Electron Interactions in Nanoscale Focused Electron Beam Processing

Wednesday, November 5, 2003, 9:20 am, Room 320

Session: New Frontiers in Microsystems: NEMS and BioMEMS
Presenter: P.D. Rack, University of Tennessee
Authors: P.D. Rack, University of Tennessee
J. Kim, University of Tennessee
J.D. Fowlkes, University of Tennessee
S.J. Randolph, University of Tennessee
D.C. Joy, University of Tennessee
Correspondent: Click to Email
Focused electron beam induced processing has recently been demonstrated to be a viable technique for selective nanoscale processing. The technique is similar in principle to focused ion beam processing, however, the electron-stimulated reactions have been shown to have a smaller effective beam width (~ 50nm) and do not suffer the collateral damage associated with gallium implantation. In this presentation, we will show our recent progress in electron beam stimulated deposition and etching. Particular attention will be given to the effects that secondary and backscattered electrons have on the deposited or etched structure. Electron-solid and electron-gas Monte Carlo simulations will be correlated to the observed deposition and etching profiles profiles. Beam energy and current density effects will also be shown and explained. Finally, application of the process to several nanoscale devices will be demonstrated.