AVS 50th International Symposium
    Microelectromechanical Systems (MEMS) Tuesday Sessions
       Session MM-TuA

Paper MM-TuA8
PZT Dry Etching using ICP Etcher for MEMS Devices

Tuesday, November 4, 2003, 4:20 pm, Room 320

Session: Fabrication and Characterization of MEMS Devices
Presenter: M. Dubey, U.S. Army Research Laboratory
Authors: M. Dubey, U.S. Army Research Laboratory
R.G. Polcawich, U.S. Army Research Laboratory
E. Zakar, U.S. Army Research Laboratory
J. Pulskamp, U.S. Army Research Laboratory
A.E. Wickenden, U.S. Army Research Laboratory
L.J. Currano, U.S. Army Research Laboratory
Correspondent: Click to Email
Piezoelectric Lead Zirconate Titanate (PZT) thin films deposited on platinized silicon substrates were reactively ion etched using an inductively coupled plasma (ICP) etching system. Etch rates for PZT, Pt, and silicon dioxide were determined from room temperature to 90 °C using Ar, He, Cl@sub 2@, CF@sub 4@, C@sub 2@H@sub 4@, C@sub 4@F@sub 8@, and SF@sub 6@ gases at RF powers from 500 to 1400 W. Measured etch rate for PZT varied from 500 to 2600 Å/min, for Pt from 940 to 1750 Å/min, and for oxide from 50 to 300 Å/min. Experimental results will be presented on selectivity and etched profile of PZT, Pt, and silicon dioxide films at different operating pressures and bias voltages. MEMS (microelectromechanical systems) test structures fabricated using ICP etchers will also be described.