AVS 50th International Symposium
    Electronic Materials and Devices Tuesday Sessions
       Session EM+SC-TuP

Paper EM+SC-TuP9
Deposition and Field-Emission Characterization of Electrically Conductive Diamond-Like Amorphous Carbon Films

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: H. Kinoshita, Shizuoka University, Japan
Authors: H. Kinoshita, Shizuoka University, Japan
R. Ikuta, Shizuoka University, Japan
K. Sakurai, Shizuoka University, Japan
S. Murakami, Shizuoka University, Japan
Correspondent: Click to Email
Diamond-like amorphous carbon films doped with nitrogen (DAC:N) were formed using intermittent supermagnetron plasma chemical vapor deposition (CVD) technique,@footnote 1@ for the fabrication of high performance field emitters. DAC:N films were deposited on Si and glass wafers using i-C@sub 4@H@sub 10@/N@sub 2@ plasma to investigate the influence of discharge-off time, at lower-electrode temperature of 100°C, upper- and lower-electrode rf powers (UPRF/LORF) of 800W/100W, and electrode spacing of 40mm. Discharge-on time was 1min, and off time (cooling time) was controlled to 15sec-10min. With decrease of cooling time, resistivity was decreased. At cooling time of 15sec, however, DAC:N film was peeled off from a wafer by its plasma heating. By reducing the electrode spacing from 40mm to 20mm, resistivity and optical band gap of DAC:N film deposited at 800W/800W rf powers and 5min cooling time decreased to 0.11@ohm@cm and 0eV, respectively. A DAC:N film of 500Å thickness was deposited on a n-Si wafer at 850W/100W, and was patterned in many island shapes of 1µm x 1µm sizes. Using it, a threshold emission current density of 0.01mA/cm@super 2@ was observed at the electric field of 12V/µm. At the electric field of 21V/µm, maximum field-emission current density (IMAX) of 3mA/cm@super 2@ was observed at the electric field of 21V/µm. A flat DAC:N film of 700Å thickness was deposited on a n-Si wafer at 800W/800W. Using the flat DAC:N film, a threshold electric field of 18V/µm, and IMAX of 2.2mA/cm@super 2@ was observed at the electric field of 32V/µm. @FootnoteText@ @footnote 1@H.Kinoshita and T.Murakami, J.Vac.Sci.Tecnol.A 20, (2002) 403.