AVS 50th International Symposium
    Electronic Materials and Devices Tuesday Sessions
       Session EM+SC-TuP

Paper EM+SC-TuP8
Thermal Conductivity Analysis of Highly-Oriented Diamond Films for Silicon on Diamond Electronic Applications

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: N. Govindaraju, North Carolina State University
Authors: N. Govindaraju, North Carolina State University
A. Aleksov, North Carolina State Univeristy
F. Okuzumi, North Carolina State University
G.N. Yushin, North Carolina State University
S.D. Wolter, Army Research Office / AMSRL- RO-PM
J.T. Prater, Army Research Office / AMSRL- RO-PM
Z. Sitar, North Carolina State University
Correspondent: Click to Email
The extremely high thermal conductivity of diamond (~ 22 W/cmK) along with its wide bandgap (5.3 eV) and high specific resistance (~10@super 12@ @ohm@cm) make it an alluring material for incorporation as a dielectric in Silicon On Diamond (SOD) technology. SOD offers enhanced thermal transport properties in addition to the speed and power enhancing properties offered by the traditional Silicon On Insulator (SOI) technology. As the single crystal growth of diamond on silicon proves elusive, the pragmatic approach would entail the use of Highly Oriented Diamond (HOD) films. It is imperative, for the proposed SOD technology, that the thermal properties be well characterized. The current study seeks to fulfill this requirement by measuring all aspects of thermal conductivity of HOD films. Commercially available thin wire thermocouples (Type K) were used in conjunction with a thin film heater to carry out steady state measurements using the traditional heated bar technique. Preliminary results indicated an average value of ~ 8 W/cmK for measurements done on free standing HOD films. To further refine the accuracy of the measured thermal conductivity, measurements using a thin film heater and thin film thermocouples were implemented. Studies by Graebner@footnote 1@ have shown that grain size has a great impact on the thermal conductivity of randomly oriented polycrystalline diamond. Since it is known that the size of the columnar grains varies as a function of diamond film thickness, we studied thermal conductivity as a function of thickness. This was achieved by etching away the diamond using an argon-oxygen plasma and implementing the thermal measurements recursively. All thermal conductivity data has been measured as a function of temperature. @FootnoteText@@footnote 1@J.E. Graebner, et. al., Diamond and Related Materials, 2 (1993), 1059-1063.