AVS 50th International Symposium
    Electronic Materials and Devices Tuesday Sessions
       Session EM+SC-TuP

Paper EM+SC-TuP2
A New Method to Produce Silicon-on-Insulator Wafer-Ar@super +@ Implantation with H@super +@-plasma Processing

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: B. Chen, New Jersey Institute of Technology
Authors: B. Chen, New Jersey Institute of Technology
A. Usenko, New Jersey Silicon Wafer Tech
W. Carr, New Jersey Institute of Technology
Correspondent: Click to Email
In this paper, we describe a new method to fabricate SOI wafer. Ar+ ions were implanted into Si(100) at energy ranging from 30 KeV to 200 KeV and dose from 1*10@super 15@ to 1*10@super 16@ cm@super -2@. To avoid amorphization, the samples were thermally insulated and the beam current was maintained high enough (about 3mA/cm2). After implantation, pieces of these samples were subjected to thermal annealing at temperature ranging from 200°C to 800°C. The evolution of microstructure of these samples were investigated by TEM. In the annealed samples, Argon clusters are found in either 2-D cavities (Nano-cracks) or 3D cavities (bubbles). Then, these samples were processed by H+ plasma. Nano-cracks and bubbles will help trapping H diffused from the surface. Then this hydrogenated wafer was bonded with the other oxidized wafer. After annealed at 600 °C, a thin layer will be transferred from the hydrogenated wafer to the oxidized one. In this way, we can get the thin layer SOI wafer.