AVS 50th International Symposium
    Electronic Materials and Devices Tuesday Sessions
       Session EM+SC-TuP

Paper EM+SC-TuP11
Submicron MTJ Cell Selectivity and Switching Field Analysis using Scanning Probe Microcopy Technique

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: D.S. Kim, SungKyunKwan University, Korea
Authors: D.S. Kim, SungKyunKwan University, Korea
J. Heo, SungKyunKwan University, Korea
I.S. Chung, SungKyunKwan University, Korea
Correspondent: Click to Email
It has been reported that in a Synthetic Anti Ferromagnet (SyAF) deposited MTJ bit, the demagnetizing magneto static domain will be diminished regardless of its size with a very low aspect ratio. Thus, the anisotropy ratio and the size of the MTJ (Magnetoresistance Tunneling Junction) cell can be reduced more. Scanning Probe Microscopy (SPM) analysis has great advantage in submicron MTJ bit characterization, since it does not need to make a MTJ contact. We have successfully attained the H-R curve using SPM under controlling external magnetic field for submicron scaled MTJ bits. Therefore, We made to investigate the issues in selectivity characteristics and switching field characteristics in terms of various anisotropy ratio and sizes. We can attain the asteroid curve by applying both hard axis and easy axis magnetic field simultaneously either by rotating sample in diagonal or by applying current through write line. We found the newly introduced SPM diagonal field appliance method would be more efficient than conventional ones, in investigating a MTJ bit switching field characterization.