AVS 50th International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeP

Paper AS-WeP6
Ferroelectric Properties of Bi @sub 3.25@La @sub 0.75@Ti@sub 3@O@sub 12@ Thin Films on (117)-oriented LaNiO@sub 3@ Electrodes

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: K.T. Kim, Chung-Ang University, Korea
Authors: C.I. Kim, Chung-Ang University, Korea
K.T. Kim, Chung-Ang University, Korea
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The BLT thin films were prepared by using metal organic decomposition method. The structure and morphology of the films were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM), and Scanning electron micrograph (SEM). SEM and AFM showed uniform surface of the films. The LNO thin films annealed at temperature as high as 600@super °@C exhibit the (100)-oriented structure. The BLT thin films were found to crystallize preferably with (117)-oriented grains on LNO bottom electrode annealed at 600@super °@C for 1h. However, the BLT thin films were grown using a Pt bottom electrode showed a polycrystalline phase. The BLT thin films grown on LNO thin films showed excellent ferroelectricity and higher remanent polarization than BLT thin film using a Pt electrode. The remanent polarization Pr and coercive field is 22.5 mC/cm@super 2@ and 120 kV/cm. The BLT thin films on LNO bottom electrode exhibited no significant degradation of switching charge at least up to 5x10@super 9@ switching cycles at a frequency of 50 kHz below cycling fields of 5 V. It was shown experimentally that there was no data loss after 3x10@super 4@ s of memory retention at room temperature.