AVS 50th International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeP

Paper AS-WeP5
Dielectric Properties of Epitaxial Growth (Pb, Sr)TiO@sub 3@ Thin Films on Al@sub 2@ O@sub 3@ (100) Substrate

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: K.T. Kim, Chung-Ang University, Korea
Authors: K.T. Kim, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
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Electrical tunable dielectric devices rely on the variation of a ferroelectric materials dielectric constant with application of an electric field. The requirements of Ferroelectric materials are low dielectric constant, high tunability, low losses and low leakage current. The structure and morphology of the films were characterized using X-ray diffraction and scanning electron microscopy. We investigated on the structural, electrical properties of (Pb@sub 0.5@,Sr@sub 0.5@)TiO@sub 3@ thin films on the Al@sub 2@ O@sub 3@ (100) substrate prepared using MOD method. From the XRD analysis, the peak in the XRD pattern of PST thin films on the Al@sub 2@ O@sub 3@ substrate was shown epitaxial growth. The low loss (~0.001) and high tunability (~60%) were obtained for (Pb,Sr)TiO@sub 3@ thin films on the LaNiO@sub 3@ substrate measured at 1 GHz. @FootnoteText@ This work was supported by Korea Research Foundation Grant (KRF-2001-042-E00042).