AVS 50th International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeP

Paper AS-WeP19
High Spatial Resolution XPS Analysis of Si Samples Prepared using the FIB Lift-out Technique

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: J. Fenton, University of New Mexico
Authors: J. Fenton, University of New Mexico
J.E. Fulghum, University of New Mexico
L.A. Giannuzzi, FEI Company
F.A. Stevie, North Carolina State University
Correspondent: Click to Email
The FIB lift-out technique is increasingly utilized to prepare a wide variety of samples for SEM and TEM analysis, although there have been few studies of sample preparation-related changes in surface chemistry. The goal of this project is to assess the impact of Ga@super +@ contamination resulting from FIB lift-out preparation of Si. X-ray photoelectron spectroscopy (XPS) has become an increasingly useful characterization technique for such samples due to recent advances in imaging and small area analysis. The Ga distribution on the Si surface, and the impact of sample preparation on surface oxidation, were evaluated using high spatial resolution XPS. The SiO@sub 2@ thickness and uniformity were compared with Si from a control sample, which was not exposed to the FIB Ga@super +@ source. Both quantitative, high spatial resolution imaging and spectra-from-images methods were used to characterize Ga and SiO@sub 2@ distributions. These methods are required for accurate characterization of the FIB samples, as the samples are generally smaller than the areas analyzed using small area spectroscopy methods.