AVS 50th International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeP

Paper AS-WeP10
Electronic Structure of Carbon Nanotube Filled with Cs

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: H. Kim, Seoul National University, Korea
Authors: Y.J. Song, Seoul National University, Korea
H. Kim, Seoul National University, Korea
G.-H Jeong, Tohoku University, Japan
R. Hatakeyama, Tohoku University, Japan
Y. Kuk, Seoul National University, Korea
Correspondent: Click to Email
As one of the most promising candidate materials for nanoelectronic devices,a carbon nanotube (CNT) has attracted much interest for its ideal electrical properties. The properties of a pristine CNTs are now well understood after studies with scanning probe microscope, transmission electron microscope, raman spectroscopy and transport measurements. CNTs can be semiconducting or metallic, but their electronic properties cannot be controlled since they are determined by uncontrollable chirality. Recently it has been suggested that the local modification of their electronic properties can be done by inserting or adsorbing various molecules into or on the side wall of CNTs. The modification of the local density of states can be utilized to produce nanometer-scale electronic devices. Filling metals into CNTs produce local metallic nanotubes. We have chosen to fill CNTs with Cs. We studied the geometric and electronic structures of these CNTs. The local change in the geometric structure implies the modification of CNT with Cs metal filling. That was confirmed by measuring the shift of the van Hove Singularities in scanning tunelling spectroscopy. Partially filled Cs metal chains in CNT seems to work as carrier dopants.