AVS 50th International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThM

Paper AS-ThM7
Quantitative Depth Profiling of Silicon Oxynitride Films by Electron Spectroscopy

Thursday, November 6, 2003, 10:20 am, Room 324/325

Session: Electron Spectroscopy
Presenter: P. Mrozek, Micron Technology Inc.
Authors: P. Mrozek, Micron Technology Inc.
D.F. Allgeyer, Micron Technology Inc.
B. Carlson, Micron Technology Inc.
Correspondent: Click to Email
Detailed surface analysis was performed using X-ray photoelectron spectroscopy (XPS) and X-ray-induced Auger electron spectroscopy (XAES) on silicon oxynitride (SiON) films grown on silicon (Si). Results of conventional XPS depth profiling of SiON at shallow angles demonstrated high depth resolution with fine details of N and O distributions. Si Auger parameter analysis supplemented XPS by showing the extent of nitridization as a function of depth. Angle-resolved data were analyzed using QUASES-ARXPS software. Results are discussed in terms of possible growth mechanisms of SiON.