| AVS 49th International Symposium | |
| Surface Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SS+EL-ThA1 Invited Paper Epitaxial Growth Dynamics of Semiconductor Quantum Dot Structures S.R. Leone, University of California and Lawrence Berkeley National Laboratory |
| 2:40pm | SS+EL-ThA3 Si Deposition on H-terminated Si(100) Surfaces@footnote *@ J.-Y. Ji, T.T. Barus, T.-C. Shen, Utah State University, G. Qian, University of Illinois at Urbana-Champaign, X. Luo, National Renewable Energy Laboratory, S. Ren, Illinois State University, S. Zhang, National Renewable Energy Laboratory, Y.C. Chang, University of Illinois at Urbana-Champaign |
| 3:00pm | SS+EL-ThA4 An Atom-Resolved Study of Vacancy Dynamics and Surface Roughening on Bromine-Etched Si(100) Surfaces C.F. Herrmann, J.J. Boland, University of North Carolina, Chapel Hill |
| 3:20pm | SS+EL-ThA5 Dynamics of Si(100)-(2x1) Surface Modification with Cl G. Xu, E. Graugnard, V. Petrova, K.S. Nakayama, J.H. Weaver, University of Illinois at Urbana-Champaign |
| 3:40pm | SS+EL-ThA6 Surface Modification without Desorption: Recycling of Cl on Si(100)-(2x1) K.S. Nakayama, E. Graugnard, J.H. Weaver, University of Illinois at Urbana-Champaign |
| 4:00pm | SS+EL-ThA7 Spontaneous Roughening -- Fundamental Limits in Si(100) Halogen Etch Processing D. Chen, J.J. Boland, University of North Carolina at Chapel Hill |
| 4:20pm | SS+EL-ThA8 Preparation of Atomically Flat Si(100) Surface by Ion Etching J. Kim, J.-Y. Ji, T.-C. Shen, Utah State University, J.S. Kline, J.R. Tucker, University of Illinois |
| 4:40pm | SS+EL-ThA9 Probing the Chemistry of Impurities with STM: The Profound Effect of Dissolved Oxygen on Silicon Etching S.P. Garcia, H. Bao, M.A. Hines, Cornell University |