| AVS 49th International Symposium | |
| Plasma Science | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-TuA1 Plasma-Wall Interaction Studies during Gate Etch Processes G. Cunge, CNRS/LTM, France, M. Kogelschatz, N. Sadeghi, CNRS/LSP, France, L. Vallier, O. Joubert, CNRS/LTM, France |
| 2:20pm | PS2-TuA2 Effect of Plasma Chamber Wall Conditions on Atomic Chlorine Concentration and Polysilicon Etch Rate Uniformity T.W. Kim, E.S. Aydil, University of California, Santa Barbara |
| 2:40pm | PS2-TuA3 Abrupt Changes with Mixture Composition in the Surface Coverage and Etch Rate During Si Etching by Cl@sub 2@-Ar Plasmas N.C.M. Fuller, I.P. Herman, Columbia University, V.M. Donnelly, University of Houston |
| 3:00pm | PS2-TuA4 Generating High-efficiency Neutral Beams by Using Negative Ions in an Inductively Coupled Plasma Source S. Samukawa, K. Sakamoto, Tohoku University, Japan, K. Ichiki, Ebara Research Co., Ltd., Japan |
| 3:20pm | PS2-TuA5 Direct Detection of Radical and Stable Species Impacting and Desorbing from Surfaces Y. Kimura, J.W. Coburn, D. Fraser, D.B. Graves, University of California, Berkeley |
| 4:00pm | PS2-TuA7 Film Formation, CF@sub 2@ Reactivity and Ion Effects in Fluorocarbon Plasma Systems I.T. Martin, E.R. Fisher, Colorado State University |
| 4:20pm | PS2-TuA8 Invited Paper Surface Reaction Analyses for Si/SiO@sub 2@ Selective Etching Processes using Molecular Dynamics Simulations S. Hamaguchi, Kyoto University, Japan |
| 5:00pm | PS2-TuA10 Subsurface Diffusion and Reaction of Fluorine Atoms in Photoresist F. Greer, D. Fraser, J.W. Coburn, D.B. Graves, University of California, Berkeley |