| AVS 49th International Symposium | |
| Plasma Science | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-FrM1 Study of SiO@sub 2@ Etching with Plasma-beam Irradiation K. Kurihara, A. Egami, M. Nakamura, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 8:40am | PS-FrM2 Measurements of Desorbed Products and Etching Yield by CFx+(x=1,2,3) Ion Irradiation K. Karahashi, K. Ishikawa, H. Tuboi, K. Yanai, K. Kurihara, M. Nakamura, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 9:00am | PS-FrM3 Etch Mechanisms of SiOC and Selectivity to SiO@sub2@ and SiC in Fluorocarbon Based Plasmas N. Posseme, T. Chevolleau, L. Vallier, O. Joubert, CNRS/LTM, France, P. Mangiagalli, Applied Materials, France |
| 9:20am | PS-FrM4 Hydrophilic Plasma Surface Modification of Membranes: Surface Analysis, Gas-Phase Diagnostics, and Mechanisms of Energy Transfer K.R. Kull, J. Zhang, E.R. Fisher, Colorado State University |
| 9:40am | PS-FrM5 Radical Reactions with Organic/Polymeric Surfaces J. Torres, C.C. Perry, S. Bransfield, D.H. Fairbrother, Johns Hopkins University |
| 10:00am | PS-FrM6 The Interaction Dynamics of Ar/H Plasmas with Silicon Surfaces J. Villette, F. Gou, M.A. Gleeson, A.W. Kleyn, Leiden University, The Netherlands |
| 10:20am | PS-FrM7 Electron-Stimulated Atomic Scale Recovery of Ion-Induced Damage on Si(100) T. Narushima, NRI-AIST, Japan, M. Kitajima, NIMS, Japan, K. Miki, NRI-AIST and NIMS, Japan |
| 11:00am | PS-FrM9 Reduction of Hole Currents and E' centers in SiO@sub 2@ Induced by Vacuum-Ultraviolet-Light Using Pulse-Time-Modulated Plasma Y. Ishikawa, M. Okigawa, S. Kumagai, S. Samukawa, Tohoku University, Japan |
| 11:20am | PS-FrM10 Evolution of Line Edge Roughness During Poly-Si Gate Stack Etching S. Rauf, P.J. Stout, J. Cobb, Motorola Semiconductor Products Sector |
| 11:40am | PS-FrM11 Ar@super +@/XeF@sub 2@ Beam Etching of Si: What about Doping? A.A.E. Stevens, E. Te Sligte, H.C.W. Beijerinck, Eindhoven University of Technology, The Netherlands |