| AVS 49th International Symposium | |
| Electronic Materials and Devices | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EL+SS+SC-WeA1 Scanning Tunneling Microscopy and Spectroscopy of Gallium Oxide and Indium Oxide Deposition on GaAs(001)-(2x4) M.J. Hale, J.Z. Sexton, University of California, San Diego, S.I. Yi, Applied Materials, D.L. Winn, A.C. Kummel, University of California, San Diego |
| 2:20pm | EL+SS+SC-WeA2 Structure-Sensitive Oxidation of the Indium Phosphide (001) Surface G. Chen, University of California, Los Angeles, S.B. Visbeck, Siemens & Shell Solar Gmbh, Germany, D.C. Law, University of California, Los Angeles, R.F. Hicks, University of California, Los Angeles; AVS fellow |
| 2:40pm | EL+SS+SC-WeA3 Invited Paper The Addition of Sb and Bi 'Surfactants' during GaN Growth by Metal Organic Vapor Phase Epitaxy T.F. Kuech, L. Zhang, H.F. Tang, J. Schieke, M. Mavrikakis, University of Wisconsin - Madison |
| 3:20pm | EL+SS+SC-WeA5 Surface Reaction Study of Tungsten Nitride Precursors Decomposition on Si(100)-(2 x 1) Y.-W. Yang, Synchrotron Radiation Research Center, Taiwan, J.-B. Wu, Y.-F. Lin, H.-T. Chiu, National Chiao-Tung University, Taiwan |
| 3:40pm | EL+SS+SC-WeA6 Thermal Decomposition and Desorption Study of Tetrakis(diethylamido)zirconium(TDEAZr) on Si(100) for MOCVD and ALD of ZrO@sub 2@ K. Yong, J. Jeong, S. Lim, Pohang University of Science and Technology, Korea |
| 4:00pm | EL+SS+SC-WeA7 Reactions of Organosulfur Compounds with Si(100) for Chemically Controlled Epitaxy of II-VI Semiconductors on Si(100) Z. Zhu, A. Srivastava, R.M. Osgood Jr., Columbia University |
| 4:20pm | EL+SS+SC-WeA8 Kinetics and Mechanism of Adsorption and Ultrathin Oxide Growth by Ozone on Si(100)2x1 and Si(111)7x7 K. Nakamura, A. Kurokawa, H. Nonaka, S. Ichimura, National Institute of Advanced Industrial Science and Technology (AIST), Japan |
| 4:40pm | EL+SS+SC-WeA9 Stress-induced Dissociative Chemisorption of Oxygen on Si(001) M. Yata, Y. Uesugi-Saitow, National Institute for Materials Science, Japan |
| 5:00pm | EL+SS+SC-WeA10 Direct Detection of D@sub 2@O and D@sub 2@ on D/Si(111) Surfaces under O Atom Exposures F. Rahman, F. Khanom, A. Aoki, S. Inanaga, A. Namiki, Kyushu Institute of Technology, Japan |