AVS 49th International Symposium
    Electronic Materials and Devices Wednesday Sessions
       Session EL+SS+SC-WeA

Paper EL+SS+SC-WeA6
Thermal Decomposition and Desorption Study of Tetrakis(diethylamido)zirconium(TDEAZr) on Si(100) for MOCVD and ALD of ZrO@sub 2@

Wednesday, November 6, 2002, 3:40 pm, Room C-107

Session: Semiconductor Film Growth and Oxidation
Presenter: K. Yong, Pohang University of Science and Technology, Korea
Authors: K. Yong, Pohang University of Science and Technology, Korea
J. Jeong, Pohang University of Science and Technology, Korea
S. Lim, Pohang University of Science and Technology, Korea
Correspondent: Click to Email
Tetrakis(diethylamido)zirconium (TDEAZr) is used as a zirconium-precursor to deposit zirconium oxide by metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Surface reaction study of precursors can aid in describing the kinetics of MOCVD and ALD. Surface reaction and desorption of TDEAZr (Zr(N(C@sub 2@H@sub 5@)@sub 2@)@sub 4@) on Si(100) were studied using temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). During TPD, ethylethyleneimine, diethylamine, acetonitrile, ethylene and hydrogen desorbed as main decomposition products of diethylamido, which was chemisorbed on Si(100) through the scission of zirconium-diethylamido bond in TDEAZr. The formation of silicon-carbide and silicon-nitride was observed on the surface after TPD runs. These results indicated that a complete decomposition of diethylamido also proceeded. A reaction pathway model of TDEAZr/Si(100) was proposed. Also, the coadsorption of TDEAZr with water on Si(100) was studied.