| AVS 49th International Symposium | |
| Electronic Materials and Devices | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 9:00am | EL+SC+MI-MoM3 Invited Paper Low-temperature Epitaxial Growth of the Wide Bandgap Semiconductor SiCAlN I.S.T. Tsong, Arizona State University |
| 9:40am | EL+SC+MI-MoM5 Evolution of Structure and Optical Properties of GaAsN Films Grown by Reactive Molecular Beam Epitaxy M.J. Reason, W. Ye, X. Weng, V. Rotberg, R.S. Goldman, University of Michigan |
| 10:00am | EL+SC+MI-MoM6 Effects of LED Processing Steps on the Surface of Doped GaN Epilayers K.H.A. Bogart, D.D. Koleske, A.A. Allerman, A.J. Fischer, K.W. Fullmer, K.C. Cross, C.C. Mitchell, Sandia National Laboratories |
| 10:20am | EL+SC+MI-MoM7 Invited Paper Hydrogen Removal Mechanisms from Gallium Nitride B.D. Thoms, Y. Yang, J. Lee, Georgia State University |
| 11:00am | EL+SC+MI-MoM9 N-type Diamond Electronics With Nitrogen Doped Ultrananocrystalline Diamond J.E. Gerbi, Argonne National Laboratory, B.W. Alphenaar, University of Louisville, O. Auciello, Argonne National Laboratory, J. Birrell, University of Illinois at Urbana-Champaign, J.A. Carlisle, D.M. Gruen, Argonne National Laboratory |
| 11:20am | EL+SC+MI-MoM10 Invited Paper Electronic Structure and Spin-Polarization of Mn-containing Dilute Magnetic III-V Semiconductors L. Kronik, M. Jain, J.R. Chelikowsky, University of Minnesota |